Power supplies in space applications operate in environments that require enhanced radiation technology to withstand extreme particle interactions and solar and electromagnetic events. These are conditions are known to degrade space-based systems and disrupt operations.
To meet this requirement, Microchip Technology has announced the M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), metal–oxide–semiconductor field-effect transistor (MOSFET) for commercial aerospace and defence space applications.
Designed for future satellite system designs as well as serving as an alternate source in existing systems, the radiation-hardened M6 MRH25N12U3 MOSFET provides the primary switching element in power conversion circuits including point-of-load converters, DC-DC converters, motor drives and controls and general-purpose switching. The MOSFET withstands the harsh environments of space, extends the reliability of power circuitry and meets all requirements of MIL-PRF19500/746 with enhanced performance.
The device can withstand total ionising dose (TID) up to 100 krad and 300 krad and single event effects (SEE) with linear energy transfer (LET) up to 87 MeV/mg/cm2. It provides 100-per cent wafer lot radiation hardness assurance in validation tests.
“Microchip’s entry into the radiation-hardened MOSFET market reflects our long-term commitment to support our customer base and provide aerospace and defence OEMs and integrators with high-performance solutions and continuous supply,” said Leon Gross, vice president of Microchip’s Discrete Product Group business unit. “In addition to our proven quality and reliability, the M6 MRH25N12U3 provides a value pricing option for developers and offers them full application support.”