STMicroelectronics adds new devices to the STPOWER family of LDMOS transistors that consist of three product series optimized for RF power amplifiers.
The STPOWER LDMOS ((laterally-diffused metal-oxide semiconductor) devices feature high efficiency, low thermal resistance and high current handling capability. The devices combine a short conduction-channel length with a high breakdown voltage for low-power consumption and high reliability.
The new STPOWER LDMOS IDCH and IDDE series are 28V/32V common-source N-channel enhancement-mode lateral field-effect RF power transistors. The IDCH devices are suitable for all modulation formats, provide output power from 8W to 300W, and are specifically designed for applications up to 4GHz, including 2.45GHz industrial, scientific, and medical (ISM), wireless infrastructure, satellite communications, and avionics and radar equipment.
The IDDE devices contain 10W-700W devices for broadband commercial, industrial, and scientific applications at frequencies up to 1.5GHz. These devices are said to withstand a load VSWR (voltage standing wave ratio) of 10:1. They are also suitable for all typical modulation formats, and for most classes of RF PA operation including Class A, Class AB, and Class C. Their high-efficiency results in lower operating costs and lower heat dissipation. The lower heat dissipation simplifies thermal management and enables compact systems.
The IDEV series features a 50V common-source, N-channel-enhancement-mode, lateral field-effect, RF power transistor technology. These devices are designed for ISM applications at frequencies up to 250MHz, including driving high-power CO2 lasers, plasma generators, MRI systems, broadcast FM-radio transmitters in the 88MHz–108MHz range, and avionics and radar applications up to 1.5GHz. Their output power ranges from 15W up to 2.2kW. They support all modulation formats and are suitable for PA operation in Class A, Class AB, and Class C.
The IDEV series is said to be capable of up to 2.2kW continuous-wave (CW) output power, from HF (3-30MHz) frequencies up to 250MHz. The power efficiency of greater than 82% minimizes system power demand and ensures high reliability with simple thermal management.